Reliability improvement of HfO2/SiON gate stacked nMOSFET using fluorinated silicate glass passivation layer

Author

Hsieh, Chih-Ren ; Chen, Yung-Yu ; Chung, Jer-Fu ; Lou, Jen-Chung

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

240

Lastpage

242

Abstract

In this paper, the reliability of the fluorinated hafnium oxide (HfO₂) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore obtained for the fluorinated HfO₂/SiON gate stack.

Keywords

CMOS integrated circuits; MOSFET; hafnium compounds; integrated circuit reliability; silicon compounds; CMOS compatible fluorinated silicate glass process; HfO₂-SiON; dangling bonds; fluorine atoms; gate stacked nMOSFET; interface state degradation; oxygen vacancies recovery; reliability improvement; stress-induced threshold voltage; Chemical vapor deposition; Dielectric devices; Dielectric substrates; Glass; Hafnium oxide; Interface states; MOSFET circuits; Passivation; Semiconductor films; Threshold voltage; FSG; HfO2; fluorine;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394287

Filename

5394287