• DocumentCode
    3226147
  • Title

    EMC immunity of integrated smart power transistors in a non-50Ω environment

  • Author

    Nzalli, Hermann ; Wilkening, Wolfgang ; Jansen, Rolf H.

  • Author_Institution
    Robert Bosch GmbH (AE/EID), Reutlingen, Germany
  • fYear
    2013
  • fDate
    15-18 Dec. 2013
  • Firstpage
    214
  • Lastpage
    219
  • Abstract
    The Direct Power Injection (DPI) standard, widely used for the susceptibility analysis of integrated circuits (IC), specifies an ideal 50Ω-environment for the investigations. This constant load assumption does not fully cover latter stages or the IC final operating environment, where ICs are subjected to various load impedances, especially at pins which are connected to wiring harnesses. We present variable-load DPI measurements and large-signal simulations for new circuit blocks, namely a simplified high-side driver and an ESD structure. The results extend the applicability of small-signal simplification methods beyond a low-side driver formerly reported by the same authors.
  • Keywords
    electromagnetic compatibility; power integrated circuits; power transistors; EMC immunity; ESD structure; constant load assumption; direct power injection standard; integrated circuits; integrated smart power transistors; large-signal simulations; simplified high-side driver; small-signal simplification methods; susceptibility analysis; variable-load DPI measurements; Immunity testing; Impedance; Impedance measurement; Integrated circuit modeling; Load modeling; Direct Power Injection (DPI); EMC (Electromagnetic compatibility); Load-pull; S-parameter; Variable-load DPI;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2013 9th Intl Workshop on
  • Conference_Location
    Nara
  • Type

    conf

  • DOI
    10.1109/EMCCompo.2013.6735203
  • Filename
    6735203