• DocumentCode
    3226787
  • Title

    Highly reliable and low-power full adder cell

  • Author

    Ibrahim, Walid ; Beg, Azam ; Beiu, Valeriu

  • Author_Institution
    Dept. of Comput. Eng., United Arab Emirates Univ., Al Ain, United Arab Emirates
  • fYear
    2011
  • fDate
    15-18 Aug. 2011
  • Firstpage
    500
  • Lastpage
    503
  • Abstract
    Full adders (FAs) are essential for digital circuits including microprocessors, digital signal processors, and microcontrollers. Both the power consumption and the reliability of FAs are crucial as they directly affect: arithmetic logic units, floating-point units, as well as memory address calculations. This paper studies the effect threshold voltage (VTH) variations play on the reliability of a classical 28-transistor FA, and shows that reliability can be enhanced without increasing the occupied area, and while also reducing power consumption. An enabling transistor sizing scheme is used to improve on reliability without increasing power consumption (as reducing and limiting currents). The proposed FA in 16nm predictive technology model (PTM) is significantly more reliable (six orders of magnitude in case of Cout, and three orders of magnitude in case of Sum at 10% input variations) and dissipates 38× less than a classical FA, while being 6× slower.
  • Keywords
    adders; integrated circuit reliability; low-power electronics; microcontrollers; arithmetic logic unit; digital circuit; digital signal processor; floating-point unit; highly reliable full adder cell; low-power full adder cell; memory address calculation; microcontroller; microprocessor; power consumption; predictive technology model; reliability; threshold voltage; CMOS integrated circuits; Integrated circuit reliability; Logic gates; MOSFETs; CMOS; Full adder; energy; power; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
  • Conference_Location
    Portland, OR
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4577-1514-3
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2011.6144434
  • Filename
    6144434