DocumentCode
3226787
Title
Highly reliable and low-power full adder cell
Author
Ibrahim, Walid ; Beg, Azam ; Beiu, Valeriu
Author_Institution
Dept. of Comput. Eng., United Arab Emirates Univ., Al Ain, United Arab Emirates
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
500
Lastpage
503
Abstract
Full adders (FAs) are essential for digital circuits including microprocessors, digital signal processors, and microcontrollers. Both the power consumption and the reliability of FAs are crucial as they directly affect: arithmetic logic units, floating-point units, as well as memory address calculations. This paper studies the effect threshold voltage (VTH) variations play on the reliability of a classical 28-transistor FA, and shows that reliability can be enhanced without increasing the occupied area, and while also reducing power consumption. An enabling transistor sizing scheme is used to improve on reliability without increasing power consumption (as reducing and limiting currents). The proposed FA in 16nm predictive technology model (PTM) is significantly more reliable (six orders of magnitude in case of Cout, and three orders of magnitude in case of Sum at 10% input variations) and dissipates 38× less than a classical FA, while being 6× slower.
Keywords
adders; integrated circuit reliability; low-power electronics; microcontrollers; arithmetic logic unit; digital circuit; digital signal processor; floating-point unit; highly reliable full adder cell; low-power full adder cell; memory address calculation; microcontroller; microprocessor; power consumption; predictive technology model; reliability; threshold voltage; CMOS integrated circuits; Integrated circuit reliability; Logic gates; MOSFETs; CMOS; Full adder; energy; power; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144434
Filename
6144434
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