Modified CMOS monolithic stacked coupled stripline balun for millimeter-wave applications

Author

Xia, Jun ; Wang, Zhigong ; Li, Yanjin ; Lu, Huaxiang

Author_Institution

Jiangsu Key Lab. of ASIC Design, Nantong Univ., Nantong, China

fYear

2010

fDate

8-11 May 2010

Firstpage

1312

Lastpage

1314

Abstract

In this paper, a modified CMOS monolithic stacked coupled stripline balun for millimeter-wave applications is proposed. Implemented in TSMC´s one-poly eight-metal (1P8M) 0.13 μm mixed-signal (MS)/RF CMOS process, it exhibits a good performance from 28.6 to 35.3 GHz. The minimum insertion loss is only about 0.83 dB. The symmetry is good. The absolute magnitude imbalance is <;0.6 dB and absolute phase imbalance is <;10° within the hole 1-dB bandwidth frequency range. The return loss is <;-10 dB from 28.6 to 35.3 GHz.

Keywords

CMOS integrated circuits; baluns; millimetre wave circuits; mixed analogue-digital integrated circuits; strip line circuits; CMOS monolithic stacked coupled stripline balun; frequency 28.6 GHz to 35.3 GHz; magnitude imbalance; millimeter-wave application; mixed-signal-RF CMOS process; one-poly eight-metal; phase imbalance; size 0.13 micron; Bandwidth; CMOS technology; Impedance matching; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Radiofrequency integrated circuits; Stripline; Transceivers; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524804

Filename

5524804