Development of Plasma-Damage Free Neutral Beam Sputtering System; High Performance Indium Tin Oxide Films at Room Temperature with Application to Top Emmission OLED

Author

Jang, Jin-Nyoung ; Lee, YouJong ; Kim, JooHyoung ; Yang, Ie-Hong ; Oh, Kyoung Suk ; Yoo, Suk Jae ; Kim, Daechul ; Lee, Bonju ; Choi, Soung Woong ; Park, Young Chun ; Hong, MunPyo

Author_Institution

Dept. of Display & Semicond. Phys., Korea Univ., Chungnam

fYear

2008

fDate

21-24 Jan. 2008

Firstpage

1

Lastpage

5

Abstract

A neutral beam system has been developed to produce hyperthermal neutral beams (HNB) sputtering system. ITO thin film with good performance has been developed by the HNB sputtering system at the room temperature. The optimized conditions as neutral beam acceleration bias of -30 V and In & Sn composition ratio of 99:01 gives lower resistivity as 4.22 times 10^-4 Omega-cm and higher transmittance over 90% near wavelength of 550 nm. The room temperature-processed ITO films applied top electrode of OLED without plasma related damage.

Keywords

indium compounds; organic light emitting diodes; sputtering; OLED; high performance indium tin oxide films; hyperthermal neutral beams; neutral beam acceleration; organic light emitting diodes; plasma-damage free neutral beam sputtering system; Acceleration; Conductivity; Electrodes; Hyperthermia; Indium tin oxide; Organic light emitting diodes; Particle beams; Plasma applications; Plasma temperature; Sputtering; Damage Free; HNB(Hyperthermal Neutral Beam); ITO; OLED; Room Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Flexible Electronics and Displays Conference and Exhibition, 2008

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2053-7

Electronic_ISBN

978-1-4244-2054-4

Type

conf

DOI

10.1109/FEDC.2008.4483884

Filename

4483884