130 mW CW operation of multi-quantum well DFB lasers at 1.3 μm

Linear DFB lasers emitting at 1.3 μm are key components for fiber-optic analog transmission applications, such as cable television (CATV) systems. In this letter, we report on the high power operation of strained layer Multi-Quantum Well (S-MQW) InGaAsP/InP DFB lasers at 1.3 μm wavelength. A record 130 mW CW power emitted into a single longitudinal mode has been demonstrated. The lasers used in this work were fabricated by a two step MOCVD/LPE hybrid crystal growth technique. The 1% compressively strained 6 QW separate confinement heterostructure InGaAsP/InP wafer was grown in a low pressure MOCVD reactor. The width of each quantum well is 5 nm and the width of each barrier is 12 nm. Following this, a grating was transferred onto the wafer and a 1.5 μm wide mesa was etched into the wafer. Current blocking layers were then grown by LPE to form a BH laser