A New SrBi4Ti4O15/CaBi4Ti4O15 thin film capacitor for excellent electric stability

Author

Nomura, Shuhei ; Yamashita, Kaoru ; Noda, Minoru ; Uchida, Hiroshi ; Funakubo, Hiroshi

Author_Institution

Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2011

fDate

24-27 July 2011

Firstpage

1

Lastpage

3

Abstract

SrBi₄Ti₄O₁₅ (SBTi) and CaBi₄Ti₄O₁₅ (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO₃ (BST) case, it is observed that the SBTi film keeps a low leakage of 10^-7 A/cm² at 250 kV/cm, which is smaller by an order of magnitude than the BST film, even with thinner thickness in the SBTi film. This indicates that the SBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.

Keywords

bismuth compounds; calcium compounds; circuit stability; dielectric thin films; platinum; strontium compounds; thin film capacitors; titanium compounds; Pt; SrBi₄Ti₄O₁₅-CaBi₄Ti₄O₁₅; barium perovskite oxide; bismuth layered structure dielectrics; dielectric films; electric stability; permittivity capacitor; perovskite barium titanate; stacked-type dielectric capacitors; thin film capacitor; Bismuth; Capacitors; Crystals; Films; Temperature dependence; Bismuth Layered Structure Dielectrics (BLSD); electric stability; environmentally-resistant; film capacitor;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

Conference_Location

Vancouver, BC

Print_ISBN

978-1-4577-1162-6

Electronic_ISBN

978-1-4577-1161-9

Type

conf

DOI

10.1109/ISAF.2011.6014132

Filename

6014132