Characterization of high-frequency noise performance of GaN double heterojunction HEMT

Author

Xu, Yuehang ; Guo, Yunchuan ; Wu, Yunqiu ; Xu, Ruimin ; Yan, Bo

Author_Institution

EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2010

fDate

8-11 May 2010

Firstpage

1606

Lastpage

1609

Abstract

A systematic GaN single heterojucntion HEMT (SH-HEMT) physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The high frequency noise performance of AlGaN/GaN/AlGaN double heterojuction HEMT (DH-HEMT) is studied based on the established SH-HEMT model. The results show that, because of the enhancement of carrier confinement in DH-HEMT, better high frequency noise performance can be achieved.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN-AlGaN; DC characterization; DH-HEMT; RF characterization; SH-HEMT; TCAD Silvaco; double heterojunction HEMT; field-dependent mobility; high-frequency noise performance; interface state; physical-based numerical model; polarization effect; single heterojucntion HEMT; surface state; Aluminum gallium nitride; Carrier confinement; DH-HEMTs; Gallium nitride; HEMTs; Interface states; Numerical models; Polarization; Radio frequency; Surface fitting;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524841

Filename

5524841