DocumentCode
3229260
Title
A new concept for a non punch through IGBT with MOSFET like switching characteristics
Author
Miller, G. ; Sack, J.
Author_Institution
Siemens AG, Munich, West Germany
fYear
1989
fDate
26-29 Jun 1989
Firstpage
21
Abstract
An IGBT (insulated-gate bipolar transistor) is presented which is based on bulk silicon material without a buffer layer. In contrast to other devices the carrier lifetime was kept as high as possible. It is shown that such a device with a breakdown voltage of 1400 V and a short-circuit capability of 1200 V at 20 V gate voltage has on-state and switching losses that are not higher-maybe even lower- than those of a buffer layer device if its backside p-emitter efficiency is kept low enough
Keywords
bipolar transistors; insulated gate field effect transistors; power transistors; switching; 1200 V; 1400 V; 20 V; IGBT; backside p-emitter; breakdown voltage; carrier lifetime; gate voltage; insulated-gate bipolar transistor; losses; power transistors; short-circuit; Breakdown voltage; Buffer layers; Charge carrier lifetime; Costs; Epitaxial growth; Insulated gate bipolar transistors; MOSFET circuits; Silicon; Switching loss; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location
Milwaukee, WI
Type
conf
DOI
10.1109/PESC.1989.48468
Filename
48468
Link To Document