Formation of cylindrical profile of Si by KrF excimer laser system for optical interconnect

Author

Hung, Shih-Che ; Shiu, Shu-Chia ; Chao, Jiun-Jie ; Lin, Ching-Fuh

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2011

fDate

15-18 Aug. 2011

Firstpage

5

Lastpage

8

Abstract

A technique applying the homogenized KrF excimer laser reformation to fabricate Si cylindrical profile is presented. High-power excimer laser was used to illuminate high-aspect-ratio Si ridges which were fabricated using typical lithography and etching process. The Si ridges were then melted and reshaped to cylinders due to surface tension. The structure can be further preceded by thermal oxidation to produce wave guiding photonics. It is capable of fabricating sub-micrometer Si waveguides with extremely smooth surface.

Keywords

elemental semiconductors; excimer lasers; laser beam etching; lithography; melting; optical fabrication; optical interconnections; optical waveguides; oxidation; ridge waveguides; silicon; surface tension; Si; cylinders reshaping; cylindrical profile formation; etching process; guiding photonics; high-aspect-ratio ridges; high-power excimer laser; homogenized KrF excimer laser reformation; lithography; melting process; optical interconnect; smooth surface; submicrometer waveguides fabrication; surface tension; thermal oxidation; CMOS integrated circuits; Educational institutions; Lasers; Optical waveguides; Oxidation; Photonics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Conference_Location

Portland, OR

ISSN

1944-9399

Print_ISBN

978-1-4577-1514-3

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2011.6144570

Filename

6144570