Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature

Author

Fletcher, R.M. ; Kuo, Q.R. ; Osentowski, T.D. ; Craford, M. George ; Nam, D.W. ; Dallasasse, J.M. ; Holonyak, Nick

Author_Institution

Hewlett Packard Optoelectronics Division

fYear

1988

fDate

2-4 Nov. 1988

Firstpage

360

Lastpage

364

Keywords

Diode lasers; Doping; Inductors; Lattices; Semiconductor lasers; Substrates; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.

Conference_Location

Santa Clara, CA, USA

Type

DOI

10.1109/LEOS.1988.689852

Filename

689852

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