Design rule optimization of regular layout for leakage reduction in nanoscale design

The effect of non-rectilinear gate (NRG) due to sub-wavelength lithograph dramatically increases the leakage current by more than 15X. To mitigate this penalty, we have developed a systematic procedure to optimize key layout parameters in regular layout with minimum area and speed overhead. As demonstrated in 65 nm technology, the optimization of regular layout achieves more than 70% reduction in leakage under NRG, with area penalty of ~10% and marginal impact on circuit speed and active power.