Reduced threshold bottom emitting vertical cavity lasers by AlAs oxidation

Author

Floyd, P.D. ; Thibeault, B.J. ; Coldren, L.A. ; Merz, J.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

414

Abstract

Summary form only given. In summary, very low threshold current etched-pillar InGaAs DBR QW VCSELs have been fabricated using AlAs-oxidation. Monotonically decreasing threshold currents were observed for down to very small area devices, indicating suppression of diameter dependent, optical scattering loss caused by etched-pillar sidewalls

Keywords

III-V semiconductors; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; laser cavity resonators; light scattering; optical fabrication; optical losses; oxidation; quantum well lasers; surface emitting lasers; AlAs; AlAs oxidation; InGaAs; diameter dependent; etched-pillar InGaAs DBR QW VCSELs; etched-pillar sidewalls; monotonically decreasing threshold currents; optical scattering loss; quantum well laser fabrication; small area devices; threshold bottom emitting vertical cavity lasers; very low threshold current; Distributed Bragg reflectors; Electrons; Etching; Gallium arsenide; Optical fiber communication; Optical losses; Oxidation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484778

Filename

484778