DocumentCode
3231335
Title
Power consumption & reliability in NanoCMOS
Author
Reis, Ricardo
Author_Institution
PGMicro/PPGC-Inst. de Inf., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
711
Lastpage
714
Abstract
Thermal issues is an important challenge in NanoCMOS chips. High temperatures can reduce the reliability, so it is important to reduce power consumption to improve reliability. It is necessary a change in physical design paradigms to reduce the needed amount of transistors to perform one task. This work shows a new approach to reduce the amount of transistors by using complex gates and a new set of EDA tools to generate any transistor network. Some results show an important reduction on power consumption, improving also circuit reliability.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit reliability; power consumption; semiconductor device reliability; EDA tool; complex gate; nanoCMOS chip; nanoCMOS reliability; physical design paradigm; power consumption; thermal issue; transistor network; CMOS integrated circuits; Integrated circuit reliability; Layout; Logic gates; Power demand; Transistors; EDA; NanoCMOS; Physical Design; Power Consumption; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144656
Filename
6144656
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