• DocumentCode
    3231335
  • Title

    Power consumption & reliability in NanoCMOS

  • Author

    Reis, Ricardo

  • Author_Institution
    PGMicro/PPGC-Inst. de Inf., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil
  • fYear
    2011
  • fDate
    15-18 Aug. 2011
  • Firstpage
    711
  • Lastpage
    714
  • Abstract
    Thermal issues is an important challenge in NanoCMOS chips. High temperatures can reduce the reliability, so it is important to reduce power consumption to improve reliability. It is necessary a change in physical design paradigms to reduce the needed amount of transistors to perform one task. This work shows a new approach to reduce the amount of transistors by using complex gates and a new set of EDA tools to generate any transistor network. Some results show an important reduction on power consumption, improving also circuit reliability.
  • Keywords
    CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit reliability; power consumption; semiconductor device reliability; EDA tool; complex gate; nanoCMOS chip; nanoCMOS reliability; physical design paradigm; power consumption; thermal issue; transistor network; CMOS integrated circuits; Integrated circuit reliability; Layout; Logic gates; Power demand; Transistors; EDA; NanoCMOS; Physical Design; Power Consumption; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
  • Conference_Location
    Portland, OR
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4577-1514-3
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2011.6144656
  • Filename
    6144656