DocumentCode
323164
Title
Simulation of the active behavior of silicon irradiated microstrip detectors
Author
Passeri, D. ; Baroncini, M. ; Ciampolini, P. ; Bilei, G.M. ; Santocchia, A. ; Checcucci, B. ; Fiandrini, E.
Author_Institution
Ist. Nazionale di Fisica Nucl., Perugia, Italy
fYear
1997
fDate
9-15 Nov 1997
Firstpage
119
Abstract
In this paper, we discuss the application of a conventional device simulator to the study of silicon microstrip detectors, with special emphasis on the issues related to radiation damage. Suitable physical models are introduced, and their incorporation into the simulation code is illustrated. Simulation of simple structures provides a preliminary validation: results are physically sound, and agrees with those expected from theory and literature works
Keywords
radiation effects; semiconductor device models; silicon radiation detectors; Si; Si microstrip detectors; device simulator; irradiated; radiation damage; simulation code; Analytical models; Design optimization; Microelectronics; Microstrip; Numerical analysis; Radiation detectors; Silicon radiation detectors; Solid state circuits; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1997. IEEE
Conference_Location
Albuquerque, NM
ISSN
1082-3654
Print_ISBN
0-7803-4258-5
Type
conf
DOI
10.1109/NSSMIC.1997.672525
Filename
672525
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