Study on hall effect of SOI MAG-MOSFET formed by nano-polysilicon films

The hetero-junction source and drain of SOI MAG-MOSFET of n-type nano-polycrystalline silicon films on p-type crystalline silicon were fabricated and the Hall effect was studies. The nano-polycrystalline silicon films was deposited in a plasma enhanced chemical vapor deposition system. Experiments shown, the nano-polycrystalline silicon films-Si hetero-source and hetero-drain are abrupt hetero-junction and shown good temperature stability and good rectifying properties. The SOI MAG-MOSFET is devices made on very thin silicon layers on top of the insulating oxide. The advantages of using SOI structures are that the parasitic capacitance can be significantly reduced as well as some unique properties of SOI that allow low- power and low-voltage operations to be improved. Appeal of a structure like this the possibility of application that would require the flexibility of nano-polycrystalline silicon films.