DocumentCode
3232680
Title
Two methods for improved accuracy calibration and control of ion implanter incidence angle
Author
Elzer, R. Daniel ; Oakey, Paul ; Chen, Jiann-Jong ; Sing, David
Author_Institution
Motorola Inc., Chandler, AZ, USA
fYear
1999
fDate
1999
Firstpage
343
Lastpage
347
Abstract
Recent trends in semiconductor manufacturing require the use of higher energy ion implantation and tighter implant angle control. This paper describes the use of SIMS profiles and ThermaWave ThermaProbe maps to determine the accuracy of ion implanter tilt and twist orientation
Keywords
angular measurement; calibration; ion implantation; photothermal effects; process control; secondary ion mass spectroscopy; spatial variables control; SIMS profiles; ThermaWave ThermaProbe maps; batch implanters; calibration; improved accuracy; incidence angle control; ion implanter incidence angle; semiconductor manufacturing; tilt orientation; twist orientation; Application specific integrated circuits; Atomic measurements; Calibration; Implants; Ion implantation; Mass spectroscopy; Nuclear electronics; Semiconductor device manufacture; Shadow mapping; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5217-3
Type
conf
DOI
10.1109/ASMC.1999.798262
Filename
798262
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