• DocumentCode
    3232816
  • Title

    Modeling and electrical characterization of parasitic effects for GaAs integrated circuits. Experimental validation and CAD formulas

  • Author

    Hassaine, N. ; Lecours, M. ; Delisle, G.Y.

  • Author_Institution
    Dept. of Electr. Eng., Laval Univ., Que., Canada
  • fYear
    1995
  • fDate
    16-20 May 1995
  • Firstpage
    1077
  • Abstract
    This study investigates the computing of the inductance and capacitance coefficients of short links (gold wire connections, vias, interconnection crossing and coupled lines). The [L] and [C] matrix calculations are performed with the vector and scalar potential given in an integral form, taking into account the current density distribution on the conductors. Analytical formulas easy to use in CAD are derived from the numerical results using a least square method. The formulas have been shown to agree, with a precision in the order of 3%, with simulation results and with experimental results obtained on test boards in the frequency range 1-30 GHz.<>
  • Keywords
    III-VI semiconductors; MMIC; circuit CAD; circuit analysis computing; gallium arsenide; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; least squares approximations; 1 to 30 GHz; CAD formulas; GaAs; capacitance coefficients; coupled lines; current density distribution; electrical characterization; inductance coefficients; interconnection crossing; least square method; parasitic effects; test boards; vector potential; vias; Bonding; Conductors; Fabrication; Gallium arsenide; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Least squares methods; Parasitic capacitance; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1995., IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-2581-8
  • Type

    conf

  • DOI
    10.1109/MWSYM.1995.406158
  • Filename
    406158