DocumentCode
3232816
Title
Modeling and electrical characterization of parasitic effects for GaAs integrated circuits. Experimental validation and CAD formulas
Author
Hassaine, N. ; Lecours, M. ; Delisle, G.Y.
Author_Institution
Dept. of Electr. Eng., Laval Univ., Que., Canada
fYear
1995
fDate
16-20 May 1995
Firstpage
1077
Abstract
This study investigates the computing of the inductance and capacitance coefficients of short links (gold wire connections, vias, interconnection crossing and coupled lines). The [L] and [C] matrix calculations are performed with the vector and scalar potential given in an integral form, taking into account the current density distribution on the conductors. Analytical formulas easy to use in CAD are derived from the numerical results using a least square method. The formulas have been shown to agree, with a precision in the order of 3%, with simulation results and with experimental results obtained on test boards in the frequency range 1-30 GHz.<>
Keywords
III-VI semiconductors; MMIC; circuit CAD; circuit analysis computing; gallium arsenide; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; least squares approximations; 1 to 30 GHz; CAD formulas; GaAs; capacitance coefficients; coupled lines; current density distribution; electrical characterization; inductance coefficients; interconnection crossing; least square method; parasitic effects; test boards; vector potential; vias; Bonding; Conductors; Fabrication; Gallium arsenide; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Least squares methods; Parasitic capacitance; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406158
Filename
406158
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