Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

Author

Hane, Masami ; Ikezawa, Takeo ; Kawada, Michihito ; Ezaki, Tatsuya ; Yamamoto, Toyoji

Author_Institution

Syst. Devices Res. Lab., NEC Corp., Sagamihara

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

55

Lastpage

58

Abstract

Strain effects on different crystallographic channel silicon nMOSFETs have been investigated by using a self-consistent quantum mechanical full-band (multi-subband) Monte Carlo (MC) device simulation. Simulation results show that the nMOSFET drain-current increases with applying uniaxial tensile stress while it exhibits different behavior for lang100rang and lang110rang different channel directions. Further detailed analyses have been made to clarify appropriate physical mechanism of the drive-current-increase by means of a source-side-injection/backscattering concept

Keywords

MOSFET; Monte Carlo methods; crystal orientation; elemental semiconductors; internal stresses; semiconductor device models; silicon; tensile strength; Si; channel crystal orientation effects; drain current; drive current; multisubband Monte Carlo device simulation; self-consistent quantum mechanical full-band device simulation; source-side backscattering effects; source-side injection effects; strain effects; strained silicon nMOSFET; uniaxial tensile stress; vertical quantization; Analytical models; Backscatter; Capacitive sensors; Charge carrier density; MOSFETs; Monte Carlo methods; National electric code; Quantization; Silicon; Tensile stress; Monte Carlo; channel orientation; device simulation; multi-subband; strained MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282837

Filename

4061580