Parameter extraction of SOILDMOS based on the HISIM-HV model

Author

Tianle, Miao ; WenJun, Li ; Huang, Wang ; Xudan, Shentu ; Jun, Liu ; Lingling, Sun

Author_Institution

Microelectron. CAD Center, Hangzhou Dianzi Univ., Hangzhou, China

fYear

2010

fDate

8-11 May 2010

Firstpage

683

Lastpage

686

Abstract

As an RF power device, SOILDMOS has a huge market demand and broad development prospects. In this paper, we conduct extensive measurement of the SOILDMOS chip using the vector network analyzer, microwave probe station, semiconductor parameter analyzer. The measuring results are obtained with Agilent IC-CAP 2008. With these results, SOILDMOS can be modeled based on the HiSIM-HV model. The parameter extraction and curve fitting are carried out with the IC-CAP tool. The experimental results show that the parameters extracted based on the HiSIM-HV model perform well.

Keywords

curve fitting; power MOSFET; semiconductor device models; silicon-on-insulator; Agilent IC-CAP 2008; HISIM-HV model; IC-CAP tool; RF power device; SOILDMOS; curve fitting; microwave probe station; parameter extraction; semiconductor parameter analyzer; vector network analyzer; MOS devices; MOSFET circuits; Parameter extraction; Power MOSFET; Radio frequency; Radiofrequency amplifiers; Semiconductor device measurement; Silicon; Soil measurements; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525025

Filename

5525025