• DocumentCode
    3233498
  • Title

    Proton irradiation for improved GTO thyristors

  • Author

    Bakowski, Mietek ; Galster, Norbert ; Hallén, Anders ; Weber, André

  • Author_Institution
    IMC, Kista, Sweden
  • fYear
    1997
  • fDate
    26-29 May 1997
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    We apply proton irradiation to tailor the lifetime in large area 2.5 kV and 4.5 kV standard GTO thyristors. The devices are already optimised with respect to the trade-offs between physical properties. Nevertheless, it is shown that proton irradiation allows for individual optimisation of IGT and Eoff, increasing the degree of freedom for the GTO design. These two parameters can thus be trimmed independently after processing and before encapsulation
  • Keywords
    carrier lifetime; proton effects; thyristors; 125 C; 2.5 kV; 25 C; 4.5 kV; GTO design; GTO thyristors; device optimisation; gate trigger current; lifetime control; proton irradiation; turn-off losses; Anodes; Cathodes; Charge carriers; Doping; Electrons; Performance loss; Production; Protons; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
  • Conference_Location
    Weimar
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3993-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.1997.601436
  • Filename
    601436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3233498