Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Author

Saint-Martin, Jerome ; Querlioz, Damien ; Bournel, Arnaud ; Dollfus, Philippe

Author_Institution

Inst. d´´Electronique Fondamentale, Univ. de Paris-Sud, Orsay

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

216

Lastpage

219

Abstract

An efficient two-dimensional self-consistent Monte-Carlo simulator including multi sub-band transport in a 2D electron gas is described. This simulator takes into account both out of equilibrium transport and quantization effects. A new algorithm improves significantly computation time and allows us to study the sub-threshold behavior of deep sub-100 nm CMOS devices. We analyze quantization effects in a 15 nm-long DGMOS transistor

Keywords

MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; two-dimensional electron gas; 100 nm; 15 nm; 2D electron gas; CMOS device; double gate metal-oxide-semiconductor; equilibrium transport; field effect transistor; multisubband transport; nanoscaled DGMOSFET; quantization effects; selfconsistent Monte-Carlo simulator; Acoustic scattering; Computational modeling; Electrons; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Poisson equations; Quantization; Schrodinger equation; 2D Electron Gaz; Ballistic transport; Double gate; MOSFET; Monte Carlo; Multi sub-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282875

Filename

4061618