A semi-analytical model for the subthreshold behavior of SOI FinFLASH structures

Author

Perniola, L. ; Razafindramora, J. ; Scheiblin, P. ; Dauge, F. ; Jahan, C. ; De Salvo, B. ; Reimbold, Gilles ; Boulanger, Frederic

Author_Institution

CEA-LETI, Grenoble

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

228

Lastpage

231

Abstract

In this paper we present an original semi-analytical model for the subthreshold electrical behavior of complex 3D structures as the SOI FinFLASH devices. This physically-based model, which does not need any fitting parameter, solves the Poisson equation for a fin covered by trapped charges in the active dielectrics. The analytical results are compared with fully 3D numerical simulations and a good agreement is obtained down to fins with very small feature sizes (order of tens of nm). This model can be efficiently used to gain information on important cell electrical behaviors as the threshold voltage shift DeltaV_th and the subthreshold slope factor S

Keywords

Poisson equation; flash memories; semiconductor device models; silicon-on-insulator; Poisson equation; SOI FinFLASH device; active dielectrics; semianalytical model; silicon-on-insulator; subthreshold electrical behavior; CMOS technology; Dielectrics; Electrons; Electrostatics; Indium phosphide; Numerical simulation; Poisson equations; Semiconductor process modeling; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282878

Filename

4061621