Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Author

Pennington, G. ; Potbhare, S. ; McGarrity, J.M. ; Goldsman, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

236

Lastpage

239

Abstract

The impact of interface steps on electron transport in 4H-SiC MOSFETs is investigated. Steps are found to cause a large increase in roughness scattering leading to anisotropy in the low-field mobility. An increase in phonon scattering, due to variations in the channel depth, is also predicted. Monte Carlo transport simulations show that interface steps lead to degradation of the high-field phonon-limited mobility. Results are important considering the technological significance of 4H-SiC in high temperature, high power electronics

Keywords

MIS devices; Monte Carlo methods; electron mobility; interface roughness; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET interface; Monte Carlo transport simulation; SiC-SiO₂; anisotropy; electron transport; high power electronics; low-field mobility; phonon scattering; Electrons; MOSFETs; Phonons; Rough surfaces; Scattering; Silicon carbide; Surface morphology; Surface reconstruction; Surface roughness; Temperature; Monte Carlo simulation; SiC; electron transport; interface steps; phonon scattering; roughness scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282879

Filename

4061622