Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase

Author

Hagenbeck, R. ; Decker, S. ; Haibach, P. ; Mikolajick, T. ; Tempel, G. ; Isler, M. ; Jungemann, C. ; Meinerzhagen, B.

Author_Institution

Qimonda, Munich

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

322

Lastpage

325

Abstract

An iterative and time-dependent simulation method based on a full band Monte Carlo algorithm is presented to describe the injection behavior of hot electrons and holes during program and erase of Twin flashtrade memory cells. Secondaries during programming and the feedback of already injected and trapped charge carriers in the ONO nitride on subsequent injection processes are taken into account. By this method it is possible to obtain valuable information on the time-dependent evolution and the local distribution of injection currents and trapped charges in the ONO nitride of the Twin Flashtrade cell

Keywords

Monte Carlo methods; charge injection; flash memories; iterative methods; Monte Carlo algorithm; ONO nitride; Twin flashtrade memory cell; charge carrier injection; electron; iterative method; program-erase condition; time-dependent simulation method; Charge carrier processes; Charge carriers; Feedback; Flash memory; Hot carriers; Iterative methods; Monte Carlo methods; Programming profession; Silicon; Threshold voltage; Monte Carlo simulation; NROM; Twin Flash memories; erase; hot carrier injection; program; secondaries;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282900

Filename

4061643