A New Statistical Model for SILC Distribution of Flash Memory and the Effect of Spatial Trap Distribution

Author

Shim, Byung Sup ; Jin, Seonghoon ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

326

Lastpage

329

Abstract

A new statistical model accurately reproducing the result of the Monte-Carlo (MC) simulation is proposed for the analysis of the SILC distribution of flash memory. From the pre-calculated probability density distributions (PDD) of the current through one multi-trap (1-trap and 2-trap) path, the current PDD of the cell is obtained using the convolution theorem and compared with the result of MC simulation. Current PDD of the cell is found to be very sensitive to the spatial distribution of traps

Keywords

Monte Carlo methods; flash memories; leakage currents; probability; statistical analysis; Monte-Carlo simulation; PDD; SILC distribution; convolution theorem; flash memory; probability density distribution; spatial trap distribution; statistical model; stress-induced leakage current; Analytical models; Computational modeling; Computer science; Computer simulation; Convolution; Electronic mail; Flash memory; Predictive models; Probability; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282901

Filename

4061644