Modeling of the Leakage Current Distribution of 16M Stacked Single Crystal (SC)-like SOI pMOSFETs using Green´s function method

Author

Hwang, Byungjoon ; Shim, Byung Sup ; Jin, Seonghoon ; Chung, In-Young ; Jung, Soon-Moon ; Kim, Kinam ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng. & Nano-Syst. Inst., Seoul Nat. Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

334

Lastpage

336

Abstract

An analytical leakage current model is proposed to explain the large magnitude and the broad variation of the leakage current found in the 16M stacked single crystal (SC)-like SOI transistors which have the re-crystallized amorphous-silicon body. This model shows that the parasitic BJT amplification effect should be considered in addition to the trap-assisted tunneling mechanism caused by a randomly located grain boundary and interface traps. Also, the leakage current distribution of the 16M stacked SC-like SOI transistors is analyzed and simulated by utilizing Green´s function method

Keywords

Green´s function methods; MOSFET; bipolar transistors; leakage currents; semiconductor device models; silicon-on-insulator; tunnelling; 16M stacked single crystal like SOI; Green´s function method; leakage current distribution; metal oxide semiconductor field effect transistor; pMOSFET; parasitic BJT amplification effect; recrystallized amorphous-silicon; silicon-on-insulator; trap-assisted tunneling mechanism; Analytical models; DC generators; Grain boundaries; Green function; Green´s function methods; Inverters; Leakage current; MOSFET circuits; Silicon; Tunneling; BJT-amplification; component; green´s function); single crystal(SC)-like; stacked;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282903

Filename

4061646