• DocumentCode
    3234421
  • Title

    Multiple Type Grid Approach for 3D Process Simulation

  • Author

    Kimpton, D. ; Baida, M. ; Zhuk, V. ; Temkin, M. ; Chakarov, I.

  • Author_Institution
    Silvaco Int., Santa Clara, CA
  • fYear
    2006
  • fDate
    6-8 Sept. 2006
  • Firstpage
    369
  • Lastpage
    372
  • Abstract
    Various aspects of discretization and data representation in a generic 3D process simulator are discussed. It is shown that the only practical way to provide the efficient and robust simulation of various process steps is to use application specific gridding and numeric methods for distinct process step and provide smooth synchronization and data transformation between the simulation modules. We demonstrate how this approach can be successfully used for simulation of complete 50 nm MOSFET device cell starting from the physical layout and finish with simulation of its IV characteristics using the device simulator ATLAS3D
  • Keywords
    MOSFET circuits; semiconductor process modelling; MOSFET device cell; device simulator ATLAS3D; generic 3D process simulator; multiple type grid approach; Computational modeling; Data models; Etching; Geometry; Interpolation; MOSFET circuits; Robustness; Simulated annealing; Skeleton; Topology; ATLAS3D; Etching; annealing; deposition; device; implantation; process; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2006 International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0404-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2006.282911
  • Filename
    4061654