DocumentCode
3234421
Title
Multiple Type Grid Approach for 3D Process Simulation
Author
Kimpton, D. ; Baida, M. ; Zhuk, V. ; Temkin, M. ; Chakarov, I.
Author_Institution
Silvaco Int., Santa Clara, CA
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
369
Lastpage
372
Abstract
Various aspects of discretization and data representation in a generic 3D process simulator are discussed. It is shown that the only practical way to provide the efficient and robust simulation of various process steps is to use application specific gridding and numeric methods for distinct process step and provide smooth synchronization and data transformation between the simulation modules. We demonstrate how this approach can be successfully used for simulation of complete 50 nm MOSFET device cell starting from the physical layout and finish with simulation of its IV characteristics using the device simulator ATLAS3D
Keywords
MOSFET circuits; semiconductor process modelling; MOSFET device cell; device simulator ATLAS3D; generic 3D process simulator; multiple type grid approach; Computational modeling; Data models; Etching; Geometry; Interpolation; MOSFET circuits; Robustness; Simulated annealing; Skeleton; Topology; ATLAS3D; Etching; annealing; deposition; device; implantation; process; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0404-5
Type
conf
DOI
10.1109/SISPAD.2006.282911
Filename
4061654
Link To Document