Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-CMOS design

Author

Zhao, W. ; Belhaire, E. ; Mistral, Q. ; Chappert, C. ; Javerliac, V. ; Dieny, B. ; Nicolle, E.

Author_Institution

Inst. d´´Electronique Fondamentale, Univ. of Paris II

fYear

2006

fDate

14-15 Sept. 2006

Firstpage

40

Lastpage

43

Abstract

The development of hybrid magnetic-CMOS circuits such as MRAM (magnetic RAM) and magnetic logic circuit requires efficient simulation models for the magnetic devices. A macro-model of magnetic tunnel junction (MTJ) is presented in this paper. This device is the most commonly used magnetic components in CMOS circuits. This model is based on spin-transfer torque (STT) writing approach. This very promising approach should constitute the second generation of MRAM switching technology; it features small switching current (~120uA) and high programming speed (<1ns). The macro-model has been developed in Verilog-A language and implemented on Cadence Virtuoso platform with Spectre 5.0.32 simulator. Many experimental parameters are integrated in this model to improve the simulation accuracy. So, the model can efficiently be used to design hybrid magnetic CMOS circuits

Keywords

CMOS memory circuits; circuit simulation; hardware description languages; integrated circuit design; integrated circuit modelling; magnetic storage; magnetic switching; magnetic tunnelling; random-access storage; Cadence Virtuoso platform; Spectre 5.0.32 simulator; Verilog-A language; hybrid magnetic-CMOS circuit design; magnetic RAM switching technology; magnetic device; magnetic logic circuit; spin-transfer torque based magnetic tunnel junction device macro-model; spin-transfer torque writing approach; CMOS technology; Circuit simulation; Integrated circuit technology; Logic circuits; Magnetic circuits; Magnetic devices; Magnetic tunneling; Semiconductor device modeling; Torque; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Behavioral Modeling and Simulation Workshop, Proceedings of the 2006 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9742-8

Type

conf

DOI

10.1109/BMAS.2006.283467

Filename

4062049