Ultra high density nondestructive readout M-R memory cells

An analytical study of the limiting memory array density that can be achieved by using 65% Ni, 15% Fe, 20% Co multilayer magnetoresistive memory elements is reported. The electromigration limit, demagnetizing fields, temperature rise, thermal stability, and signal-to-noise ratio are the fundamental factors involved. Assuming 0.2-μm minimum feature, lithography and deposited nonconducting keepers, the maximum array density achievable with these materials is 4×10⁸ b/cm². At this density, access time is reduced to about 15 μs because of the diminished signal level