A SiGe BiCMOS operational amplifier with 48dB of gain and 9GHz unity gain bandwidth

Author

Hart, Adam ; Voinigescu, Sorin P.

Author_Institution

Dept. of ECE, Univ. of Toronto, Toronto, ON

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

9

Lastpage

12

Abstract

In this paper, we presents the design and implementation of a BiCMOS operational amplifier topology that operates from a 2.5 V supply and achieves record gain-bandwidth performance. First, a fully-differential, single stage folded-cascode with tunable common-mode feedback is described. In order to improve the DC gain of this circuit, a second version is implemented with differential gain boosting and achieves 48 dB of gain while maintaining a unity gain bandwidth of 9 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; circuit tuning; differential amplifiers; feedback amplifiers; integrated circuit design; network topology; operational amplifiers; BiCMOS operational amplifier; SiGe; amplifier topology design; bandwidth 9 GHz; circuit DC gain; differential gain boosting; gain 48 dB; gain-bandwidth performance; tunable common-mode feedback; voltage 2.5 V; Bandwidth; BiCMOS integrated circuits; Boosting; Circuit topology; Feedback; Gain; Germanium silicon alloys; Operational amplifiers; Silicon germanium; Tunable circuits and devices; SiGe BiCMOS; common-mode feedback; folded-cascode; gain boosting; operational amplifier; unity-gain bandwidth;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662701

Filename

4662701