DocumentCode
3236680
Title
A 37nV/√Hz 2.5V reference based on dual-threshold JFET technology
Author
Bowers, Derek F.
Author_Institution
Analog Devices Inc., San Jose, CA
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
13
Lastpage
16
Abstract
A very low-noise voltage reference is described built on a complementary bipolar process with the addition of dual-threshold P-channel JFETs. The difference between the two JFET thresholds exhibits stability and noise suitable for use as the basis of the reference. Additional circuitry amplifies and adjusts the tolerance and temperature coefficient of the threshold difference to create a 2.5 V temperature independent reference voltage capable of operating with supply voltages down to 2.7 volts.
Keywords
junction gate field effect transistors; complementary bipolar process; dual-threshold JFET technology; very low-noise voltage reference; voltage 2.5 V; voltage 2.7 V; voltage 37 nV; Circuit noise; Circuit stability; Doping; Implants; Low voltage; Noise generators; Packaging; Temperature dependence; Temperature sensors; Threshold voltage; Silicon bipolar/JFET process technology; analog circuits; device physics; voltage references;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662702
Filename
4662702
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