Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K

Author

Xu, Ziyan ; Wei, Xiaoyun ; Niu, Guofu ; Luo, Lan ; Thomas, Dylan ; Cressler, John D.

Author_Institution

ECE Dept., Auburn Univ., Auburn, AL

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

81

Lastpage

84

Abstract

This paper examines modeling of I_C-V_BE from 43 to 400 K in a 50 GHz peak f_T SiGe HBT technology. Existing temperature scaling equations are shown to fail below 200 K. New temperature scaling equations are proposed, and demonstrated to work well over a wide temperature range of 43-400 K. Implications to V_BE - T and DeltaV_BE - T for two transistors biased at different current densities are discussed.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; current density; energy gap; heterojunction bipolar transistors; semiconductor materials; SiGe; SiGe HBT technology; bandgap reference; current density; frequency 50 GHz; heterojunction bipolar transistors; nonideality factor; temperature 43 K to 400 K; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Noise measurement; Photonic band gap; Silicon germanium; Temperature dependence; Temperature distribution; USA Councils; Bandgap Reference; Nonideality Factor; SiGe HBT; Temperature Dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662717

Filename

4662717