Electric properties depending on temperature in SiOC dielectric layer

The SiOC Alms by chemical vapor deposition have been researched the electrical properties by leakage current. The chemical properties of SiOC film was divided into organic, hybrid and inorganic types according to the deposition condition. The leakage current also depended on the chemical properties of the films. The current increased on the SiOC film with polarity, which has many grains. These SiOC film with polarity displayed the increasing the current according to the increasing the substrate temperature. However, the SiOC film without grains decreased the leakage current. Especially, the leakage current of the B27 sample with hybrid type decreased due to the increase the substrate temperature. The dependence on the temperature was only found the sample B27. It was confirmed that the SiOC film with hybrid type is more stable low dielectric materials in high temperature.