DocumentCode
3237629
Title
Design and realization of a Ka band subharmonical mixer using self-designed Schottky diodes
Author
Mou, Jinchao ; Yu, Weihua ; Yuan, Yong ; Lv, Xin
Author_Institution
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
fYear
2010
fDate
8-11 May 2010
Firstpage
463
Lastpage
466
Abstract
This paper presents the design and realization of a Ka band subharmonically pumped mixer using self-fabricated Schottky diodes. First, the design and fabrication of GaAs Schottky diode with the cutoff frequency of 650 GHz was introduced. Then the mixer´s design was presented which consists of two parts: design of the passive linear part and optimization of the total mixer. Finally, the fabricated mixer and measured results was given, the conversion loss of which shows the validity of the fabricated Schottky diodes.
Keywords
III-V semiconductors; Schottky diodes; gallium arsenide; microwave mixers; GaAs Schottky diode; Ka band subharmonically pumped mixer; frequency 650 GHz; optimization; self-designed Schottky diodes; Band pass filters; Cutoff frequency; Design optimization; Frequency conversion; Gallium arsenide; Mixers; RF signals; Radio frequency; Scattering parameters; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525243
Filename
5525243
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