• DocumentCode
    3237629
  • Title

    Design and realization of a Ka band subharmonical mixer using self-designed Schottky diodes

  • Author

    Mou, Jinchao ; Yu, Weihua ; Yuan, Yong ; Lv, Xin

  • Author_Institution
    Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
  • fYear
    2010
  • fDate
    8-11 May 2010
  • Firstpage
    463
  • Lastpage
    466
  • Abstract
    This paper presents the design and realization of a Ka band subharmonically pumped mixer using self-fabricated Schottky diodes. First, the design and fabrication of GaAs Schottky diode with the cutoff frequency of 650 GHz was introduced. Then the mixer´s design was presented which consists of two parts: design of the passive linear part and optimization of the total mixer. Finally, the fabricated mixer and measured results was given, the conversion loss of which shows the validity of the fabricated Schottky diodes.
  • Keywords
    III-V semiconductors; Schottky diodes; gallium arsenide; microwave mixers; GaAs Schottky diode; Ka band subharmonically pumped mixer; frequency 650 GHz; optimization; self-designed Schottky diodes; Band pass filters; Cutoff frequency; Design optimization; Frequency conversion; Gallium arsenide; Mixers; RF signals; Radio frequency; Scattering parameters; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-5705-2
  • Type

    conf

  • DOI
    10.1109/ICMMT.2010.5525243
  • Filename
    5525243