DocumentCode
3241173
Title
Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept
Author
Omura, I. ; Ogura, T. ; Sugiyama, K. ; Ohashi, H.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1997
fDate
26-29 May 1997
Firstpage
217
Lastpage
220
Abstract
IEGTs are one of the promising candidates for replacing GTOs in high voltage applications in 4.5 kV range. The injection enhancement effect of IEGT structure with the deep trench MOS gate and/or the wide cell design successfully reduces the voltage drop in the N-base. In this paper, we discuss the device physics and design concept of the injection enhancement effect for not only the trench structure but also the planar structure
Keywords
power MOSFET; 4.5 kV; IEGT; N-base; carrier injection enhancement effect; design; high voltage MOS device; injection enhancement gate transistor; planar structure; trench structure; Anodes; Cathodes; Electrons; Laboratories; MOS devices; P-i-n diodes; Physics; Tellurium; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601476
Filename
601476
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