Electrical properties of vacuum deposited M/R2O3 /M thin film structures (R=Dy, Ho and Yb)

The author shows that the dielectric response of M/R₂O ₃/M structures is connected with the volume of rare earth oxide (for low temperatures and high frequencies) and with M/I boundaries (for high temperatures and low frequencies). The interface polarization, hopping mechanism, ionic and electron polarization are responsible for dielectric properties from ultralow frequencies up to the optical range. Electrical transport at constant electric field is limited by the volume of insulating film as well as by M/I contacts. Processes connected with the volume of the insulator are responsible for electrical transport at low temperatures. High temperature d.c. conductivity data are connected with near electrode regions at each M/I contact