Compounding effects of UV exposure, ion bombardment, electron shading and plasma charging in a high density plasma poly etcher

Author

Lin, Shyue-Shyh ; Tsui, Bing-Yue ; Tsai, Chia-Shone ; Hsia, Chin C.

Author_Institution

Deep Submicron Technol. Div., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

41

Lastpage

44

Abstract

A complete set of test structures was developed to monitor the compounding effects of UV exposure, ion bombardment, electron shading and plasma charging in a HDP poly etcher. Electron shading-enhanced ion bombardment damage was observed in our experiments. We also found that UV exposure does enhance plasma charging damage

Keywords

elemental semiconductors; integrated circuit technology; integrated circuit testing; ion-surface impact; plasma density; plasma materials processing; silicon; sputter etching; surface charging; ultraviolet radiation effects; HDP poly etcher; Si; UV exposure; UV exposure enhanced plasma charging damage; compounding effects; electron shading; electron shading-enhanced ion bombardment damage; high density plasma poly etcher; ion bombardment; plasma charging; plasma charging damage; test structures; Capacitors; Electrons; Etching; Leakage current; Monitoring; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798804

Filename

798804