Plasma induced damage from HDP process on the ultra-thin gate oxide

Author

Chen, Shoumian ; Sudijono, John ; Perera, Charith ; Jin, Yin ; Susilo, Fanny ; Zeng, Xu ; Kumar, A. Vijay ; Wen, Jiaqing

Author_Institution

Inst. of Microelectron., Singapore

fYear

1999

fDate

1999

Firstpage

53

Lastpage

56

Abstract

In general, as the gate oxide thickness scales down, plasma damage is reduced. In this paper, we show that, for a gate oxide thickness of 45 Å, the plasma damage due to charging could still be severe, and that the damage may be induced by high-density plasma deposition in the back-end process of device fabrication rather than the traditional dry-etching process

Keywords

dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma deposition; surface charging; 45 angstrom; HDP process; SiO₂; back-end process; device fabrication; dry-etching process; gate oxide thickness; high-density plasma deposition; plasma charging damage; plasma damage; plasma induced damage; ultra-thin gate oxide; Fabrication; MOS devices; Plasma accelerators; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798807

Filename

798807