• DocumentCode
    3242934
  • Title

    Composition and stress analysis in Si/SiGe structures

  • Author

    McCarthy, John ; Perova, Tatiana S. ; Moore, R.A. ; Bhattacharya, Surya ; Gamble, Harold S. ; Armstrong, B. Mervyn

  • Author_Institution
    Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland
  • fYear
    2004
  • fDate
    8-10 Sept. 2004
  • Firstpage
    226
  • Lastpage
    230
  • Abstract
    Strained Si technology enables improvements in CMOS performance and functionality via replacement of the bulk, cubic-crystal Si substrate with a Si substrate that contains a tetragonally distorted, biaxially strained Si thin film at the surface. Here we use micro-Raman spectroscopy to enable us to characterise growth processes of strained silicon, and to characterise the resulting level of strain/stress in the silicon and the effect it has on the underlying layer of graded SiGe.
  • Keywords
    CMOS technology; Electron mobility; Germanium silicon alloys; MOS devices; MOSFETs; Semiconductor films; Silicon germanium; Spectroscopy; Stress; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
  • Conference_Location
    Acapulco, Mexico
  • Print_ISBN
    0-7803-8531-4
  • Type

    conf

  • DOI
    10.1109/ICEEE.2004.1433882
  • Filename
    1433882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3242934