• DocumentCode
    3242986
  • Title

    Device effects and charging damage: correlations between SPIDER-MEM and CHARMR-2

  • Author

    Lukaszek, Wes ; Rendon, Michael J. ; Dyer, David E.

  • Author_Institution
    Wafer Charging Monitors Inc., Woodside, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    200
  • Lastpage
    203
  • Abstract
    The reasons underlying correlations and lack of correlations between SPIDER-MEM and CHARM-2 wafer results are investigated for wafers implanted in a high-current, low energy ion implanter equipped with a plasma charge-control system. The results can be explained by taking into account the device structure and physics of the SPIDER-MEM devices, and the charging characteristics of the implanter. The work has important implications for comparisons of results obtained from charging monitors and damage monitors
  • Keywords
    integrated circuit reliability; integrated circuit testing; ion implantation; plasma materials processing; surface charging; CHARM-2 wafers; SPIDER-MEM devices; SPIDER-MEM wafers; charging damage; charging monitors; damage monitors; device effects; device physics; device structure; high-current/low energy ion implanter; implanted wafers; implanter charging characteristics; plasma charge-control system; Control systems; Current density; Physics; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Surface charging; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1999 4th International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-9651577-3-3
  • Type

    conf

  • DOI
    10.1109/PPID.1999.798848
  • Filename
    798848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3242986