Power supply current detectability of SRAM defects

Author

Liu, Jian ; Makki, Rafic

Author_Institution

Dept. of Electr. Eng., North Carolina Univ., Charlotte, NC, USA

fYear

1995

fDate

23-24 Nov 1995

Firstpage

367

Lastpage

373

Abstract

We investigate correlations between SRAM cell defects and power supply current including I_DDQ (peak value of quiescent power supply current) and i_DDT (transient power supply current). Our results show that the power supply current can be used to detect cell shorts, cell opens, and disturb-type pattern sensitivity. We also investigate the effect of total current leakage in the power supply, which is proportional to SRAM size, on the power supply current detectability of SRAM cell defects. We present limits (obtained from simulation) on current detectability of SRAM cell defects as a function of normal power supply current leakage

Keywords

SRAM chips; electric current measurement; fault currents; fault diagnosis; leakage currents; power supply circuits; short-circuit currents; transients; I_DDQ; SRAM cell; SRAM defects; SRAM size; current detectability; disturb-type pattern sensitivity; i_DDT; large circuit effects; open defects; physical defect; power supply current; power supply current detectability; quiescent power supply current; shorts; simulation; total current leakage; transient power supply current; Circuit simulation; Circuit testing; Current measurement; Current supplies; Leak detection; Power measurement; Power supplies; Pulse circuits; Random access memory; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium, 1995., Proceedings of the Fourth Asian

Conference_Location

Bangalore

Print_ISBN

0-8186-7129-7

Type

conf

DOI

10.1109/ATS.1995.485362

Filename

485362