A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage

Author

Narazaki, A. ; Hisamoto, Y. ; Tadokoro, C. ; Takeda, Masanori ; Hagino, H.

Author_Institution

Fukuryo Semicon. Eng. Group, Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

285

Lastpage

288

Abstract

This paper reports an ultra low on-state-resistance p-channel power MOSFET without deterioration of the gate breakdown voltage. This p-channel MOSFET has a trench gate structure and an optimized channel structure. These effects make the channel resistance small without thinning of the gate oxide thickness, therefore it is possible for the total chip resistance to be reduced. As a result at BVDSS=42 V, this p-ch MOSFET exhibits an active area specific on-resistance RDS(on) A=1.5 mΩcm² (at VGS-Vth=2 V), 1.8 mΩcm² (at VGS-Vth=1.5 V), it remains 20 V of the maximum voltage applicable between gate and source

Keywords

electric breakdown; electric resistance; power MOSFET; 30 V; gate breakdown voltage; low-gate-voltage; optimized channel structure; p-channel device; trench gate power MOSFET; ultra low on-state-resistance; Batteries; Design optimization; Electric resistance; Electrodes; Etching; MOSFET circuits; Metalworking machines; Power MOSFET; Power engineering and energy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601495

Filename

601495