DocumentCode
3246428
Title
A novel high-frequency power MOSFET with quasi-SOI structure
Author
Matsumoto, Shinichi ; Yachi, Toshiaki
Author_Institution
NTT Integrated Inf. & Energy Labs., Tokyo
fYear
1997
fDate
26-29 May 1997
Firstpage
301
Lastpage
304
Abstract
A quasi-SOI power MOSFET has been fabricated by reversed silicon wafer direct bonding. In this power MOSFET, the buried oxide under the channel and source regions is removed and the channel region is directly connected to the source body contact electrode to reduce the base resistance of the parasitic n-p-n bipolar transistor. The quasi-SOI power MOSFET can suppress the parasitic bipolar action and shows lower product of the on-resistance and output capacitance than that of the vertical double diffused MOSFET
Keywords
electric breakdown; power MOSFET; silicon-on-insulator; wafer bonding; HF power MOSFET; Si; base resistance reduction; buried oxide; channel region; parasitic bipolar action suppression; parasitic n-p-n bipolar transistor; quasi-SOI structure; reversed Si wafer direct bonding; Bipolar transistors; Immune system; Laboratories; MOSFET circuits; Parasitic capacitance; Power MOSFET; Silicon; Substrates; Thin film devices; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601500
Filename
601500
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