Effective wet clean method to eliminate unwanted growth SiGe defect in FinFET

An effective wet clean method to remove unwanted growth SiGe defect in FinFET Junction sector was demonstrated in a single wafer clean toolset. The unwanted growth SiGe defect was known due to the tiny metallic particles (<;10nm) from chemical sources in pre SiGe growth clean step. The new wet clean method can remove tiny metallic particles efficiently and obtain better surface particles performance on FinFET production wafers.