Practical inverse modeling with SIESTA

Author

Strasser, R. ; Plasun, R. ; Selberherr, S.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

1999

fDate

1999

Firstpage

91

Lastpage

94

Abstract

We present a simulation system which meets the requirements for a practical application of inverse modeling in a professional environment. A simulation tool interface for the integration of arbitrary simulation tools at the user level is introduced and methodology for the formation of simulation networks is described. A Levenberg-Marquardt optimizer automates the inverse modeling procedure. Strategies for the efficient execution of simulation tools are discussed. An example demonstrates the extraction of doping profile information on the basis of electrical measurements

Keywords

doping profiles; inverse problems; semiconductor doping; semiconductor process modelling; technology CAD (electronics); Levenberg-Marquardt optimizer; SIESTA; TCAD; doping profile; electrical measurements; inverse modeling; simulation networks; simulation system; simulation tool interface; CMOS technology; Computational modeling; Concurrent computing; Data mining; Doping profiles; Electric variables measurement; Inverse problems; MOS devices; Microelectronics; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799268

Filename

799268