3D FDTD analysis of a SOT353 package containing a bipolar wideband cascode transistor using the compression approach

Author

Rittweger, M. ; Werthen, M. ; Kunisch, J. ; Wolff, I. ; Chall, P. ; Balm, B. ; Lok, P.

Author_Institution

Inst. fur Mobil-und Satellitenfunktechnik, Kamp-Lintfort, Germany

fYear

1995

fDate

16-20 May 1995

Firstpage

1587

Abstract

A 3d electromagnetic simulation of an entire mold injected plastic package including its coplanar environment is presented. The active elements are substituted by inner ports. The resulting network is connected with measured transistor data using a circuit simulator. A comparison of the simulated data with measured results is shown. The influence of the package and therefore the meaning of such a simulation procedure is discussed.<>

Keywords

finite difference time-domain analysis; microwave bipolar transistors; plastic packaging; semiconductor device packaging; 3D FDTD analysis; SOT353 package; active elements; bipolar wideband cascode transistor; circuit simulator; compression; coplanar environment; electromagnetic simulation; inner ports; mold injected plastic package; network; Circuit simulation; Electromagnetic measurements; Finite difference methods; Integrated circuit measurements; Integrated circuit packaging; Lead; Plastics; Semiconductor device packaging; Time domain analysis; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406279

Filename

406279