• DocumentCode
    3251064
  • Title

    A new structure of field emitter arrays

  • Author

    Itoh, S. ; Niiyama, T. ; Taniguchi, M. ; Watanabe, T.

  • Author_Institution
    Res. & Dev. Center, Futaba Corp., Chiba, Japan
  • fYear
    1995
  • fDate
    July 30 1995-Aug. 3 1995
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    Applications of Spindt-type field emitters to field emitter arrays are discussed. The evaluation of a new structure which was fabricated to obtain high current density at high gate voltage without destruction is presented. The emitter arrays are stabilized using a resistive layer and a cathode electrode of mesh structure.
  • Keywords
    vacuum microelectronics; Spindt-type field emitters; cathode electrode; field emitter arrays; mesh structure; resistive layer; Anodes; Cathodes; Current density; Electrodes; Electron sources; Field emitter arrays; Insulation; Niobium; Voltage; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
  • Conference_Location
    Portland, OR, USA
  • Print_ISBN
    0-7803-2143-X
  • Type

    conf

  • DOI
    10.1109/IVMC.1995.487000
  • Filename
    487000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3251064