• DocumentCode
    3251178
  • Title

    Equivalent circuit model for GaN-HEMTs in a switching simulation

  • Author

    Nakajima, Akira ; Takao, Kazuto ; Shimizu, Mitsuaki ; Okumura, Hajime ; Ohashi, Hiromichi

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An equivalent circuit model for gallium nitride-based high electron mobility transistors (GaN-HEMTs) in an exact circuit simulation is proposed. The equivalent circuit contains inherent GaN device properties, such as current-collapse and shot-channel effects. Base on the equivalent model, an power loss simulator was developed. The simulation accuracy was more than 93%. A converter optimum design method is discussed using the power loss simulator.
  • Keywords
    III-V semiconductors; equivalent circuits; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; converter optimum design; current collapse; equivalent circuit model; power loss simulator; shot channel effects; switching simulation; Circuit simulation; Design methodology; Equivalent circuits; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Stress; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 2008. INTELEC 2008. IEEE 30th International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4244-2055-1
  • Electronic_ISBN
    978-1-4244-2056-8
  • Type

    conf

  • DOI
    10.1109/INTLEC.2008.4664095
  • Filename
    4664095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3251178