Distributed amplifier based on FEA: new approach

Author

Galdetskiy, A.V.

Author_Institution

SRI Istok, Fryazino, Russia

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

138

Lastpage

141

Abstract

Two distributed amplifier (DA) designs are proposed which can overcome the influence of high microwave losses immanent to FEA. In a uniform amplifier a new electrodynamics mode is revealed which possesses anomalous low \´cold\´ microwave losses (1-2 orders lower than losses in micro stripline gate-cathodes). This mode will amplify rf signals in the cm wave band at moderate cathode transconductance values, if the electron transit angle in the gate-anode gap is about /spl pi/. Another approach is related to a periodical DA formed by lumped macrotriodes connected to a "thick" transmission line, each of them making an open circuit having low losses.

Keywords

distributed amplifiers; microwave amplifiers; microwave tubes; vacuum microelectronics; RF signal; cathode transconductance; cm waveband; cold microwave losses; distributed amplifier; electrodynamics mode; electron transit angle; field emitter array; lumped macrotriodes; open circuit; periodical DA; transmission line; uniform DA; Cathodes; Distributed amplifiers; Distributed parameter circuits; Electrodynamics; Electrons; Microwave amplifiers; Propagation losses; Radiofrequency amplifiers; Stripline; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487010

Filename

487010